preliminar y characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5520 rev - maximum ratings all ratings: t c = 25 c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/ c c amps mj caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 300 40 0.085 25 250 100 24 apt30m85svr 300 40 160 20 30 300 2.4 -55 to 150 300 4030 1300 usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt30m85svr 300v 40a 0.085 power mos v is a new generation of high voltage n-channel enhancementmode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v also achieves faster switching speeds through optimized gate layout. ? faster switching ? 100% avalanche tested ? lower leakage ? surface mount d 3 pak package power mos v ? d 3 pak g d s downloaded from: http:///
preliminar y symbol i s i sm v sd t rr q rr dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 min typ max 3970 750230 145 2559 12 10 43 7 unit pf nc ns apt30m85svr characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5520 rev - characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/ s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/ s) source-drain diode ratings and characteristics unit amps volts ns c min typ max 40 160 1.3 390 6 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25 c, l = 1.63mh, r g = 25 , peak i l = 40a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.42 40 unit c/w characteristicjunction to case junction to ambient 15.95 (.628) 16.05 (.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528) 13.51 (.532) 1.04 (.041) 1.15 (.045) revised 4/18/95 d 3 pak package outline downloaded from: http:///
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